Mediathek / CGS in Bild und Ton
Sie wünschen weitere Informationen über unsere Kristallzuchtanwendungen und Serviceleistungen? Die nachfolgenden Inhalte stehen Ihnen zum freien Download zur Verfügung.
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Czochralski-Kristallzuchtanlage CGS1218
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Czochralski Kristallzuchtanlage SC28
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SICma System
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Floatzone silicon single crystal grower
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The Polysilicon Floatzone Test Grower
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Slim Rod Puller
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MOVIE - SICma: New Generation SiC PVA Crystal Growth Furnace
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INVESTIGATION OF PROCESS PARAMETERS ON THE DISTRIBUTION OF THE SPECIFIC RESISTIVITY IN GA-DOPED CZ-CRYSTALS
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INCREASING THE PRODUCTIVITY OF THE CZOCHRALSKI PROCESS APPLYING MACHINE LEARNING
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COST EFFECTIVE GROWTH OF SILICON MONO INGOTS BY THE APPLICATION OF INCREASED PULL SPEED IN CZ-PULLER
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COST EFFECTIVE GROWTH OF SILICON MONO INGOTS BY THE APPLICATION OF A MOBILE RECHARGE SYSTEM IN CZ-PULLER
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„LIMITATIONS OF THE GROWTH RATE OF SILICON MONO INGOTS GROWN BY THE CZOCHRALSKI TECHNIQUE“
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„COST EFFECTIVE GROWTH OF SILICON MONO INGOTS BY THE APPLICATION OF ACTIVE CRYSTAL COOLING IN COMBINATION WITH LARGE MELT VOLUMES IN CZ-PULLER2“
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COST EFFECTIVE GROWTH OF SILICON MONO INGOTS BY THE APPLICATION OF THE MULTIPULLING TECHNIQUE COMBINED WITH ACTIVE CRYSTAL COOLING
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“INVESTIGATION OF PROCESS PARAMETERS ON THE DISTRIBUTION OF THE MATERIAL PARAMETERS IN CZ-CRYSTALS DOPED WITH ANTIMONY”
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INFLUENCE OF AN ACTIVE CRYSTAL COOLING DEVICE ON THE SHAPE OF THE PHASE BOUNDARY IN MONO INGOTS GROWN BY THE CZOCHRALSKI TECHNIQUE
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“GROWTH OF HIGH QUALITY SILICON MONO INGOTS BY THE APPLICATION OF A MAGNETIC CUSP FIELD IN CZ-PULLER“
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COMPARISON OF THE OXYGEN CONCENTRATION IN CZOCHRALSKI SILICON CRYSTAL OBTAINED BY A SIMPLE LUMPED-PARAMETER MODEL AND SOPHISTICATED 2D-3D SIMULATIONS