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INVESTIGATION OF PROCESS PARAMETERS ON THE DISTRIBUTION OF THE SPECIFIC RESISTIVITY IN GA-DOPED CZ-CRYSTALS
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INCREASING THE PRODUCTIVITY OF THE CZOCHRALSKI PROCESS APPLYING MACHINE LEARNING
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COST EFFECTIVE GROWTH OF SILICON MONO INGOTS BY THE APPLICATION OF INCREASED PULL SPEED IN CZ-PULLER
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COST EFFECTIVE GROWTH OF SILICON MONO INGOTS BY THE APPLICATION OF A MOBILE RECHARGE SYSTEM IN CZ-PULLER
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„LIMITATIONS OF THE GROWTH RATE OF SILICON MONO INGOTS GROWN BY THE CZOCHRALSKI TECHNIQUE“
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„COST EFFECTIVE GROWTH OF SILICON MONO INGOTS BY THE APPLICATION OF ACTIVE CRYSTAL COOLING IN COMBINATION WITH LARGE MELT VOLUMES IN CZ-PULLER2“
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COST EFFECTIVE GROWTH OF SILICON MONO INGOTS BY THE APPLICATION OF THE MULTIPULLING TECHNIQUE COMBINED WITH ACTIVE CRYSTAL COOLING
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“INVESTIGATION OF PROCESS PARAMETERS ON THE DISTRIBUTION OF THE MATERIAL PARAMETERS IN CZ-CRYSTALS DOPED WITH ANTIMONY”
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INFLUENCE OF AN ACTIVE CRYSTAL COOLING DEVICE ON THE SHAPE OF THE PHASE BOUNDARY IN MONO INGOTS GROWN BY THE CZOCHRALSKI TECHNIQUE
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“GROWTH OF HIGH QUALITY SILICON MONO INGOTS BY THE APPLICATION OF A MAGNETIC CUSP FIELD IN CZ-PULLER“
PDF ![[Translate to EN:] COMPARISON OF THE OXYGEN CONCENTRATION IN CZOCHRALSKI SILICON CRYSTAL](/fileadmin/_processed_/2/f/csm_oxygen-concentration-in-czochralski-silikon-crystal_1f822b15fc.png)
COMPARISON OF THE OXYGEN CONCENTRATION IN CZOCHRALSKI SILICON CRYSTAL OBTAINED BY A SIMPLE LUMPED-PARAMETER MODEL AND SOPHISTICATED 2D-3D SIMULATIONS
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AI-Driven Automation in the Czochralski Process: A Step Towards Sustainable Silicon Manufacturing