- PVA Crystal Growing Systems GmbH
- Machines
- Physical Vapor Transport Systems
Main Features:
- High quality & volume production up to 8’’
- Compact design
- High run to run repeatability
- High quality standards for yield maximization
- Advanced automation
Physical Vapor Transport (PVT) systems are essential for the production of high-quality semiconductor crystals, such as silicon carbide (SiC). A PVT system optimized for the challenging growth process is characterized by its ability to generate and maintain high temperatures, often exceeding 2000°C, to convert materials like SiC powder into gas. The sublimated SiC then deposits onto a seed crystal to form a monocrystalline boule. PVT systems must meet a number of key requirements, including a compact design, precise repeatability, and high-quality standards to maximize yield. They must be capable of high-volume production while also offering the flexibility for development and individual customization. Another critical aspect is automation, with systems prepared for full automation on the production floor and connectivity to e.g. SECS/GEM for seamless integration into manufacturing environments.
PVA Crystal Growing Systems GmbH has been a leading provider of PVT systems for the production of SiC single crystals for over a decade. Its SiCma product group has been instrumental in this success, with over ten years of experience in building and developing one of the most successful, commercially freely available PVT systems on the market.
Our commitment to continuous development and close collaboration with industrial and academic partners ensures that our PVT systems advance in line with our customers' requirements and promote innovation and competitiveness on a global scale. By focusing on targeted development, our customers can adapt to market changes and maintain a strong international presence.
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SiCma System
The SiCma ("Silicon Carbide machine") represents a significant advancement in the production of silicon carbide (SiC) crystals. Using the physical vapor transport (PVT) method, it efficiently converts SiC powder into high-quality monocrystalline boules. The SiCma is able to generate temperatures of up to 2,400 °C to sublimate the SiC material in a controlled environment. Despite its high-temperature capabilities, the SiCma operates with minimal energy consumption, reflecting a commitment to sustainable manufacturing practices in the field of advanced materials.
The SiCma is designed to accommodate substrate sizes of 150 to 200 mm in diameter (6'' - 8''). Its high degree of automation and compact design make it an ideal choice for high volume production. For efficient loading and unloading a mobile system can be used. Additionally, we offer a variety of modular options, including turbo pumps and measuring devices, to cater to your specific needs.
Product data at a glance:
Typical crystal diameters:: 6“ and 8“ ID small process chamber: Ø 378 mm ID large process chamber: Ø 430 mm Frequency: 6 - 10 kHz Cabinet Footprint [WxD] 1,200 x 2,500 mm