Physical Vapor Transport Systems (PVT)

They are characterized by:

• Developed for mass production
• Can also be configured as a development system with maximum variability - individualization possible
• Small footprint
• High repeat accuracy
• High quality standard for maximum yield
• Prepared for full automation on the store floor
• Connection to SECS / GEM
• Always in good contact with our PVA Crystal Growing Systems experts

The so-called Physical Vapor Transport (PVT) process has been firmly established for many years as the standard method for the production of SiC bulk material. In this process, the raw material, e.g. SiC powder, is transferred (sublimated) directly from the solid to the gaseous aggregate state at high temperatures of over 2000°C and then deposited on a seedling. In this way, the seedling grows in thickness to form a monocrystalline boule.

Silicon carbide is particularly suitable for end applications in which high currents need to be switched with as little loss as possible. The components made from silicon carbide wafers work very efficiently. This is ensured by the lower power loss and higher thermal conductivity of the circuits produced in this way. It is therefore not surprising that this material is used for high packing and power densities and where active cooling is expensive.

SiC is the ideal basis for applications in power electronics up to the kV range, as it enables high switching voltages.

With its SiCma product group, PVA Crystal Growing Systems GmbH has been building and developing one of the most successful, commercially freely available PVT systems for the production of SiC single crystals for over ten years.

Continuous further development and intensive cooperation with partners from industry and science ensure that PVT systems grow in line with our customers' requirements. Through targeted further development, we ensure that our customers can continue to assert themselves in international competition in the future.