SiCma System The SiCma ("Silicon Carbide machine") was developed for the production of SiC crystals by means of physical vapor transport (PVT). The raw material, e.g. SiC powder, is transferred…
Contact Us How can we help you with PVT systems? cgsinfo@pvatepla.comSiCma System The SiCma ("Silicon Carbide machine") was developed for the production of SiC crystals by means of…
They are characterized by: Developed for mass production Can also be configured as a development system with maximum variability - individualization possible Small footprint High repeat…
The Process In the PVT process polycrystalline Silicon Carbide (SiC) undergoes sublimation at the source at a high temperature (1,800–2,600 °C) and low pressure. In a carrier gas (e.g. Argon),…
Silicon carbide (SiC) as a basic material for electrical components is being used more and more frequently in electromobility applications. SiC-based components are characterized by their high…
Our SystemsIdeally equipped to meet Your ChallengesContact Us We are committed to close, personal collaboration with our customers, partners and employees. If you have any questions or…
TechnologiesThe Right Solution—Whatever the Application With innovative systems for all standard crystal-growing technologies and more than 60 years of experience, we are global market leaders…
Media Center Are you looking for further information about our crystal growing applications and services? The following material can be downloaded for free.