The SiCma system has been specially designed for producing Silicon-Carbide crystals (SiC) by means of physical vapor transport (PVT).
In this method the powdery base material is heated up at high temperatures, whereupon it undergoes sublimation and is finally deposited on a specially prepared substrate. This takes place through inductive heating in the kilohertz range by means of an induction coil. The coil is optimized for minimal energy consumption.
The substrate can have a diameter of 100–150 mm (4–6"). Thanks to the high degree of automation and compact footprint, the system is designed for mass production. We also offer a mobile system for charging and emptying the system as well as a range of options such as vacuum pumps and measurement devices that can be supplemented on a modular basis.