PVT Systems

SiCma

The SiCma system has been specially designed for producing Silicon-Carbide crystals (SiC) by means of physical vapor transport (PVT).
In this method the powdery base material is heated up at high temperatures, whereupon it undergoes sublimation and is finally deposited on a specially prepared substrate. This takes place through inductive heating in the kilohertz range by means of an induction coil. The coil is optimized for minimal energy consumption.

The substrate can have a diameter of 100–150 mm (4–6"). Thanks to the high degree of automation and compact footprint, the system is designed for mass production. We also offer a mobile system for charging and emptying the system as well as a range of options such as vacuum pumps and measurement devices that can be supplemented on a modular basis.

Product Data Overview

Material: Silicon Carbide

Seed wafer: 4" and 6"
Operating pressure: 1–900 mbar
Operating temperature: max. 2,400 °C

Generator
Output voltage: max. 40 kW
Frequency: 6–10 kHz
Dimensions
Height: 2,800 mm
Width: 1,200 mm
Depth: 2,000 mm
Weight (total): 1,300 kg/with control cabinet: 2,000 kg

Immediate Contact

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PVA Crystal Growing Systems GmbH
Im Westpark 10 – 12
35435 Wettenberg

Phone: +49 (0) 641/68690-0