The FZ-30 and FZ-35 Float-Zone crystal-growing systems are designed for the industrial production of monocrystalline Silicon crystals with a diameter of up to 200 mm (8"). Depending on the dimensions of the source rods, crystals with a length of up to 2,000 mm can be pulled. The crystal diameter and height of the liquid zone during the process can be monitored using a camera. The contactless melting process—the high final vacuum generated through the use of a turbomolecular pump and ultra-pure Argon as a process atmosphere—effectively prevents contamination during the process.
To cultivate large crystals, an Argon atmosphere can be generated with an overpressure of up to 3 bar in the FZ-30 and up to 5 bar in the FZ-35. Both the upper spindle and the coil can be positioned automatically. In the FZ-30, the upper spindle can be moved in either the X or Y direction. Both system types also allow Nitrogen to be introduced into the process chamber in a controlled manner. We offer a range of additional options such as a gas doping system for doping the crystals, a closed DI cooling water system, a shaper for the source rods, and a system for adjusting the orientation of the seed crystal.