Czochralski Systems

  • EKZ 3500

    The Czochralski crystal-growing system EKZ 3500 has been specially designed for industrial production of monocrystalline Silicon crystals. The 24" hot zone can be charged with up to 150 kg of Silicon (without feeder) and can produce crystals with a diameter of up to 300 mm (12").

    The maximum crystal pulling rate is 10 mm/min, while the maximum crystal and crucible rotation rate is 35 rpm. A camera system for measuring the diameter and two pyrometers for measuring the temperature allow automatic process control by means of a PLC and PC. A feeder allows the original crucible charge in the EKZ 3500 to be increased to 200 kg while still allowing multiple crystals to be pulled from one crucible (multi-pulling). An optional active crystal cooling system for increasing the axial temperature gradient can be used to significantly accelerate the crystal pulling rate and, in turn, improve productivity. A crucible charging system and crystal removal system are available as accessories. The system can also be equipped with a magnet (magnetic Czochralski (MCz)).

    Product Data Overview

    Material: Silicon

    Hot Zone
    Crucible diameter: up to 24"
    Crucible height: up to 380 mm
    Initial silicon weight: up to 150 kg
    With feeder: 200 kg

    Crystal
    Crystal diameter: up to 300 mm (12")
    Crystal length: up to 2,500 mm (≤ 8")

    Feed and Rotation Rates
    Crystal pulling rate (process): up to 10 mm/min
    Crystal rotation: up to 35 rpm
    Crucible rise rate: up to 2 mm/min
    Crucible rotation: up to 35 mm/min
    Chamber
    Chamber diameter (ID): approx. 940 mm
    Chamber height: approx. 1,680 mm
    Receiving chamber diameter:    360 mm
    Isolation valve: Door or tube lock

    Dimensions
    Height (open): 10,300 mm
    Height (closed): 9,200 mm
    Width: 4,200 mm
    Depth: 3,800 mm
    Weight: 11,160 kg
  • EKZ 2700

    The Czochralski crystal-growing system EKZ 2700 has been specially designed for industrial production of monocrystalline Slicon crystals. The 22" hot zone can be charged with up to 120 kg of Silicon (without feeder) and, in the standard process, can produce crystals with a diameter of up to 200 mm (8"), although diameters of up to 230 mm (9") are possible.

    The maximum crystal pulling rate is 10 mm/min, while the maximum crystal and crucible rotation rate is 35 rpm. A camera system for measuring the diameter and two pyrometers for measuring the temperature allow automatic process control by means of a PLC and PC. A feeder allows the original crucible charge in the EKZ 2700 to be increased to 150 kg. The system also allows multiple crystals to be pulled from one crucible (multi-pulling). An optional active crystal cooling system for increasing the axial temperature gradient can be used to significantly accelerate the crystal pulling rate and, in turn, improve productivity. A crucible charging system and crystal removal system are available as accessories.

    Product Data Overview

    Material: Silicon, Germanium

    Hot Zone
    Crucible diameter: up to 22"
    Crucible height: up to 390 mm
    Initial Silicon weight: up to 120 kg
    With feeder: max. 150 kg

    Crystal
    Crystal diameter: up to 230 mm (9")
    Crystal length: up to 2,500 mm

    Feed and Rotation Rates
    Crystal pulling rate (process): up to 10 mm/min
    Crystal rotation: up to 35 rpm
    Crucible rise rate: up to 2 mm/min
    Crucible rotation: up to 35 mm/min
    Chamber
    Chamber diameter: approx. 884 mm
    Chamber height: approx. 1,450 mm
    Isolation valve diameter:    300 mm
    Receiving chamber: Door

    Dimensions
    Height (open): 9,200 mm
    Height (closed): 8,400 mm
    Width: 3,600 mm
    Depth: 4,500 mm
    Weight (total): 8,800 kg
  • CGS-Lab

    CGS-Lab is the smallest Czochralski crystal-growing system in our portfolio and has been specially developed for institutes and laboratories. The 10" hot zone can be charged with up to 8 kg of silicon and can produce crystals with a diameter of 100 mm and a length of 300 mm. Standing just 3.4 m in height when open, it does not have to be installed in spaces with high ceilings.

    The pulling and rotation rates are equivalent to those of the “big” Czochralski systems—that is, a crystal pulling speed of up to 10 mm/min and crystal and crucible rotation rates of up to 35 rpm.
    A camera system for measuring the diameter and two pyrometers for measuring the temperature allow automatic process control by means of a PLC and PC. We also offer vacuum pumps and dust filters (SiO) specially optimized in line with your system requirements.

    Product Data Overview

    Material: Silicon, Germanium

    Hot Zone
    Crucible diameter: up to 10"
    Initial Silicon weight: up to 8 kg

    Crystal
    Crystal diameter: up to 100 mm (4")
    Crystal length: up to 300 mm

    Feed and Rotation Rates
    Crystal pulling rate (process): up to 10 mm/min
    Crystal rotation: up to 35 rpm
    Crucible rise rate: up to 2 mm/min
    Crucible rotation: up to 35 mm/min
    Chamber
    Chamber diameter: approx. 590 mm
    Chamber height: approx. 1,000 mm
    Receiving chamber: Door

    Dimensions
    Height (open): 3,400 mm
    Height (closed): 3,200 mm
    Width: 4,500 mm
    Depth: 2,100 mm
    Weight (total): 2,500 kg
  • SC 22

    The Czochralski crystal-growing system SC 22 has been specially designed for the industrial production of monocrystalline Silicon crystals (ingots) in the solar industry. The modular system concept means that it can be optimized in line with the customer’s needs. The 22" hot zone is optimized for minimal energy consumption, can be charged with up to 140 kg of Silicon (without feeder) and, in the standard process, can produce crystals with a diameter of up to 200 mm (8"), although diameters of up to 230 mm (9") are possible.

    Depending on the diameter and charge, crystals with a length of up to 2.8 m can be pulled. The maximum crystal pulling rate is 10 mm/min, while the maximum crystal and crucible rotation rate is 35 rpm. A camera system for measuring the diameter and two pyrometers for measuring the temperature allow automatic process control by means of a PLC and PC. The user-friendly graphical interface for process control and monitoring is optimized for mass production. We also offer vacuum pumps and dust filters (SiO) specially optimized in line with your system requirements. A feeder allows the original crucible charge in the SC 22 to be increased to 180 kg. The system also allows multiple crystals to be pulled from one crucible (multi-pulling). An optional active crystal cooling system for increasing the axial temperature gradient can be used to significantly accelerate the crystal pulling rate and, in turn, improve productivity. A crucible charging system and crystal removal system are available as accessories.

    Product Data Overview

    Material: Silicon

    Hot Zone
    Crucible diameter: up to 22"
    Crucible height: up to 430 mm
    Initial Silicon weight: up to 140 kg
    with feeder: 180 kg

    Crystal
    Crystal diameter: up to 230 mm (9")
    Crystal length: up to 2,800 mm

    Feed and Rotation Rates
    Crystal pulling rate (process): up to 10 mm/min
    Crystal rotation: up to 35 rpm
    Crucible rise rate: up to 2 mm/min
    Crucible rotation: up to 35 mm/min
    Chamber
    Chamber diameter: approx. 930 mm
    Chamber height: approx. 1,520 mm
    Isolation valve diameter: 304 mm
    Receiving chamber: Tube lock

    Dimensions
    Height (open): 8,780 mm
    Height (closed): 7,350 mm
    Width: 3,900 mm
    Depth: 3,300 mm
    Weight (total): 8,500 kg
  • SC 24

    The Czochralski crystal-growing system SC 24 has been specially designed for the industrial production of monocrystalline Silicon crystals (ingots) in the solar industry. The modular system concept means that it can be optimized in line with the customer’s needs. The 24" hot zone is optimized for minimal energy consumption, can be charged with up to 160 kg of Silicon (without feeder) and can produce crystals with a diameter of up to 230 mm (9") (the current industrial standard for crystals for solar cells is 200 mm (8″)). Depending on the diameter and charge, crystals with a length of up to 2.9 m can be pulled. The maximum crystal pulling rate is 10 mm/min, while the maximum crystal and crucible rotation rate is 35 rpm.

    A camera system for measuring the diameter and two pyrometers for measuring the temperature allow automatic process control by means of a PLC and PC. The user-friendly graphical interface for process control and monitoring is optimized for mass production. We also offer vacuum pumps and dust filters (SiO) specially optimized in line with your system requirements.
    A feeder allows the original crucible charge in the SC 24 to be increased to 220 kg. The system also allows multiple crystals to be pulled from one crucible (multi-pulling). An optional, active crystal cooling system for increasing the axial temperature gradient can be used to significantly accelerate the crystal pulling rate and, in turn, improve productivity. A crucible charging system and crystal removal system are available as accessories.

    Product Data Overview

    Material: Silicon

    Hot Zone
    Crucible diameter: up to 24"
    Crucible height: up to 430 mm
    Initial Silicon weight: up to 160 kg
    with feeder: 220 kg

    Crystal
    Crystal diameter: up to 230 mm (9")
    Crystal length: up to 2,900 mm

    Feed and Rotation Rates
    Crystal pulling rate (process): up to 10 mm/min
    Crystal rotation: up to 35 rpm
    Crucible rise rate: up to 2 mm/min
    Crucible rotation: up to 35 mm/min
    Chamber
    Chamber diameter: approx. 980 mm
    Chamber height: approx. 1670 mm
    Isolation valve diameter: 304 mm
    Receiving chamber: Tube lock

    Dimensions
    Height (open): 9,500 mm
    Height (closed): 7,900 mm
    Width: 3,700 mm
    Depth: 4,200 mm
    Weight (total): 9,300 kg

Immediate Contact

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PVA Crystal Growing Systems GmbH
Im Westpark 10 – 12
35435 Wettenberg

Phone: +49 (0) 641/68690-0